III-V compound semiconductor nanostructures on silicon: epitaxial growth, properties, and applications in light emitting diodes and lasers

Author:

Mi Zetian

Publisher

SPIE-Intl Soc Optical Eng

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference108 articles.

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2. H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, "A continuous-wave Raman silicon laser," Nature 433, 725-728 (2005) 10.1038/nature03346

3. M. Groenert, C. Leitz, A. Pitera, V. Yang, H. Lee, R. Ram, and E. Fitzgerald, "Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers," J. Appl. Phys. 93, 362-367 (2003) 10.1063/1.1525865

4. G. Balakrishnan, S. Huang, L. Dawson, Y. Xin, P. Conlin, and D. Huffaker, "Growth mechanisms of highly mismatched AlSb on a Si substrate," Appl. Phys. Lett. 86, 034105 (2005) 10.1063/1.1850611

5. A. Fang, H. Park, O. Cohen, R. Jones, M. Paniccia, and J. Bowers, "Electrically pumped hybrid AlGaInAs-silicon evanescent laser," Opt. Express 14, 9203-9210 (2006) 10.1364/OE.14.009203

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