Performance of vertical type deep UV light-emitting diodes depending on the Ga-face n-contact hole density-Reference-Cited by-同舟云学术

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Performance of vertical type deep UV light-emitting diodes depending on the Ga-face n-contact hole density

Published:2021-06-07 Issue:23 Volume:118 Page:231102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sung Youn Joon¹,Kim Dong-Woo¹,Yeom Geun Young¹²^ORCID,Kim Kyu Sang³^ORCID

Affiliation:

1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyounggi-Do 16419, South Korea

2. SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Kyounggi-Do 16419, South Korea

3. Department of Semiconductor Physics and Electronics, Sangji University, Wonju, Gangwon-Do 26339, South Korea

Funder

the ministry of education, science and technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0052416

Reference28 articles.

1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

2. Achieving highly conductive AlGaN alloys with high Al contents

3. Ultraviolet light-emitting diodes based on group three nitrides

4. Advances in group III-nitride-based deep UV light-emitting diode technology

5. UV-B Induced Secondary Plant Metabolites

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved efficiency of AlGaN-based flip-chip deep-ultraviolet LEDs using a Ni/Rh/Ni/Au p-type electrode;Optics Letters;2023-08-03

2. Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer;Scientific Reports;2022-05-04

3. AlGaN nanowire deep ultraviolet light emitting diodes with graphene electrode;Applied Physics Letters;2022-04-25

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