Achieving highly conductive AlGaN alloys with high Al contents
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1492316
Reference9 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Emerging gallium nitride based devices
3. Optical and electrical properties of Al-rich AlGaN alloys
4. Evidence for localized Si-donor state and its metastable properties in AlGaN
5. Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors
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