Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1402159
Reference11 articles.
1. Schottky barrier photodetector based on Mg‐dopedp‐type GaN films
2. Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices
3. Schottky barrier photodetectors based on AlGaN
4. Solar-blind AlGaN photodiodes with very low cutoff wavelength
5. III–nitrides: Growth, characterization, and properties
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