Abstract
Here, we propose a thermally stable and high-reflectivity Ni/Rh/Ni/Au p-type electrode for AlGaN-based deep-ultraviolet (DUV) flip-chip light-emitting diodes (FCLEDs). We discover that the reflectance of Ni/Au electrode deteriorated significantly after rapid thermal annealing. Experiments show that Ni and Au agglomerate at high temperatures, and more incident photons traverse the gaps between the agglomerates, leading to a decrease in reflectance of Ni/Au after annealing. In contrast, the proposed Ni/Rh/Ni/Au p-type electrode shows remarkable thermal stability as a result of the suppression of Ni agglomeration by the Rh layer at high temperatures. Besides, due to the higher reflectivity of the Ni/Rh/Ni/Au electrode and its lower specific contact resistivity formed with p-GaN, the external quantum efficiency and wall-plug efficiency of a DUV FCLED with Ni/Rh/Ni/Au electrode are increased by 13.94% and 17.30% in comparison with the one with Ni/Au electrode at an injection current of 100 mA. The Ni/Rh/Ni/Au electrode effectively solves the long-standing dilemma of efficiency degradation of DUV FCLEDs with a Ni/Au electrode after high-temperature annealing.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
National Youth Talent Support Program
Interdisciplinary Innovative Talents Foundation from Renmin Hospital of Wuhan University
Subject
Atomic and Molecular Physics, and Optics
Cited by
10 articles.
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