Radiation-induced direct bandgap transition in few-layer MoS2-Reference-Cited by-同舟云学术

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Radiation-induced direct bandgap transition in few-layer MoS2

Published:2017-09-25 Issue:13 Volume:111 Page:131101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Bo¹,Yang Sisi¹,Chen Jihan²,Mann Colin³,Bushmaker Adam³,Cronin Stephen B.¹²^ORCID

Affiliation:

1. Department of Physics and Astronomy, University of Southern California, Los Angeles, California 90089, USA

2. Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA

3. Physical Sciences Laboratories, The Aerospace Corporation, 355 S. Douglas Street, El Segundo, California 90245, USA

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5005121

Reference20 articles.

1. Charge neutral MoS2 field effect transistors through oxygen plasma treatment

2. Electrical control of neutral and charged excitons in a monolayer semiconductor

3. Direct Bandgap Transition in Many-Layer MoS2by Plasma-Induced Layer Decoupling

4. Irradiation Effects of High-Energy Proton Beams on MoS2 Field Effect Transistors

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1. Engineering Vacancies for the Creation of Antisite Defects in Chemical Vapor Deposition Grown Monolayer MoS₂ and WS₂ via Proton Irradiation;ACS Nano;2023-12-05

2. The Structure and Optoelectronic Properties of Few-layer Phosphorus-implanted MoS₂;2023 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO);2023-07-31

3. Enhanced Exciton-to-Trion Conversion by Proton Irradiation of Atomically Thin WS₂;Nano Letters;2023-04-24

4. A natural indirect-to-direct band gap transition in artificially fabricated MoS₂ and MoSe₂ flowers;Nanoscale;2023

5. Effect of gamma irradiation on the physical properties of MoS₂ monolayer;Physical Chemistry Chemical Physics;2023

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