Charge neutral MoS2 field effect transistors through oxygen plasma treatment
Author:
Affiliation:
1. Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA
2. XEI Scientific, Redwood City, California 94063, USA
Funder
National Science Foundation (NSF)
U.S. Department of Energy (DOE)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4967398
Reference26 articles.
1. Atomically ThinMoS2: A New Direct-Gap Semiconductor
2. Control of valley polarization in monolayer MoS2 by optical helicity
3. Valley polarization in MoS2 monolayers by optical pumping
4. Single-layer MoS2 transistors
5. Emerging Photoluminescence in Monolayer MoS2
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