MoS<sub>2</sub> Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation-Reference-Cited by-同舟云学术

MoS₂ Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation

Published:2024-02-12 Issue:8 Volume:18 Page:6215-6228
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Rai Anand Kumar¹^ORCID,Shah Asif A.¹,Kumar Jeevesh¹^ORCID,Chattaraj Sumana¹,Dar Aadil Bashir¹^ORCID,Patbhaje Utpreksh¹,Shrivastava Mayank¹^ORCID

Affiliation:

1. Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India

Funder

Ministry of Electronics and Information technology

Department of Science and Technology, Ministry of Science and Technology

Ministry of Human Resource Development

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c09428

Reference71 articles.

1. Edge enriched MoS2 micro flowered structure for high performance NO2 sensor

2. Enhanced Carrier Density in a MoS2/Si Heterojunction-Based Photodetector by Inverse Auger Process

3. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

4. Visualization of band offsets at few-layer MoS2/Ge heterojunction

5. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

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