Direct Bandgap Transition in Many-Layer MoS2by Plasma-Induced Layer Decoupling-Reference-Cited by-同舟云学术

Direct Bandgap Transition in Many-Layer MoS2by Plasma-Induced Layer Decoupling

Published:2015-01-14 Issue:9 Volume:27 Page:1573-1578
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Dhall Rohan¹²,Neupane Mahesh R.³,Wickramaratne Darshana³,Mecklenburg Matthew²,Li Zhen¹,Moore Cameron⁴,Lake Roger K.³,Cronin Stephen¹

Affiliation:

1. Ming Hsieh Department of Electrical Engineering; University of Southern California; Los Angeles CA 90089 USA

2. Center for Electron Microscopy and Microanalysis; University of Southern California; Los Angeles CA 90089 USA

3. Laboratory for Terahertz and Terascale Electronics; Department of Electrical and Computer Engineering; University of California; Riverside CA 92521 USA

4. XEI Scientific; Redwood City CA 94063 USA

Funder

National Science Foundation

MARCO and DARPA

NSE

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201405259/fullpdf

Reference31 articles.

1. Two-dimensional atomic crystals

2. The electronic properties of graphene

3. Ultrahigh electron mobility in suspended graphene

4. Experimental observation of the quantum Hall effect and Berry's phase in graphene

5. The rise of graphene

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