Irradiation Effects of High-Energy Proton Beams on MoS2 Field Effect Transistors-Reference-Cited by-同舟云学术

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Irradiation Effects of High-Energy Proton Beams on MoS2 Field Effect Transistors

Published:2014-02-25 Issue:3 Volume:8 Page:2774-2781
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Kim Tae-Young¹,Cho Kyungjune¹,Park Woanseo¹,Park Juhun¹,Song Younggul¹,Hong Seunghun¹²,Hong Woong-Ki³,Lee Takhee¹

Affiliation:

1. Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 151-747, Korea

2. Department of Biophysics and Chemical Biology, Seoul National University, Seoul 151-747, Korea

3. Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 561-180, Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn4064924

Reference42 articles.

1. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Graphene transistors

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1. Reducing Atomic Defects in 2D Transition Metal Dichalcogenides;Advanced Functional Materials;2024-09-03

2. Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS2 Field-Effect Transistors with Buried Local Back-Gate Structure;Nanomaterials;2024-08-07

3. Defect-Driven MoS₂ Nanosheets toward Enhanced Sensing Sensitivity;ACS Omega;2024-06-13

4. Tuning the Electronic Characteristics of Monolayer MoS₂‐Based Transistors by Ion Irradiation: The Role of the Substrate;Advanced Electronic Materials;2024-05-13

5. Reduced interface effect of proton beam irradiation on the electrical properties of WSe₂/hBN field effect transistors;Nanotechnology;2024-05-07

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