A natural indirect-to-direct band gap transition in artificially fabricated MoS<sub>2</sub> and MoSe<sub>2</sub> flowers-Reference-Cited by-同舟云学术

A natural indirect-to-direct band gap transition in artificially fabricated MoS₂ and MoSe₂ flowers

Published:2023 Issue:17 Volume:15 Page:7792-7802
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhou Jun¹^ORCID,Cui Juan²^ORCID,Du Shuo³,Zhao Zihan⁴,Guo Jianfeng⁵,Li Songyang⁵,Zhang Weifeng⁴,Liu Nan⁴^ORCID,Li Xiaotian¹,Bai Qinghu³,Guo Yang³,Mi Shuo⁵,Cheng Zhihai⁵^ORCID,He Lin¹,Nie J. C.¹,Yang Yu²^ORCID,Dou Ruifen¹^ORCID

Affiliation:

1. Department of Physics, Beijing Normal, University, Beijing, 100875, China

2. LCP, Inst Appl Phys & Computation Math, Beijing 100088, China

3. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

4. Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China

5. Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China

Abstract

In this work, tB-MoS2 and MoSe2 flower-like structures were produced using a CVD method. An indirect-to-direct energy band gap transition was shown in the region away from the flower center in the structures, accompanied by an enhanced PL intensity.

Funder

Tsinghua University

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR00477E

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