Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3327004
Reference18 articles.
1. High-efficiency InGaN-based light-emitting diodes with nanoporous GaN:Mg structure
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3. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
4. High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
5. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
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3. GaN nucleation on patterned sapphire substrate with different shapes for improved GaN overgrowth;Vacuum;2022-03
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