Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2830981
Reference22 articles.
1. Improvement of green LED by growing p-GaN on In0.25GaN/GaN MQWs at low temperature
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4. Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning
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