Nitride-based LEDs fabricated on patterned sapphire substrates-Reference-Cited by-同舟云学术

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Nitride-based LEDs fabricated on patterned sapphire substrates

Published:2003-09 Issue:9 Volume:47 Page:1539-1542
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chang S.J.,Lin Y.C.,Su Y.K.,Chang C.S.,Wen T.C.,Shei S.C.,Ke J.C.,Kuo C.W.,Chen S.C.,Liu C.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. InGaN/GaN tunnel injection blue light emitting diodes;Wen;IEEE Trans. Electron. Dev.,2002

2. Influence of Si-doping on the characteristics of InGaN/GaN multiple quantum well blue light emitting diodes;Wu;IEEE J. Quantum. Electron.,2002

3. InGaN/GaN light emitting diodes activated in O2 ambient;Kuo;IEEE Electron. Dev. Lett.,2002

4. A p-down InGaN/GaN MQW LED structure grown by MOVPE;Ko;Jpn. J. Appl. Phys.,2002

5. Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer;Sheu;IEEE Electron. Dev. Lett.,2001

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