Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2714203
Reference18 articles.
1. UV Light-Emitting Diode Fabricated on Hetero-ELO-Grown Al0.22Ga0.78N with Low Dislocation Density
2. Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes
3. Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters
4. Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etching
5. High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
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