Etch and growth rates of GaN for surface orientations in the <0001> crystallographic zone: Step flow and terrace erosion/filling via the Continuous Cellular Automaton-Reference-Cited by-同舟云学术

Etch and growth rates of GaN for surface orientations in the <0001> crystallographic zone: Step flow and terrace erosion/filling via the Continuous Cellular Automaton

Published:2023-01 Issue: Volume:153 Page:107173
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Guo Xinyan,Gosalvez Miguel.A.^ORCID,Xing Yan^ORCID,Chen Ye

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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4. Insulating substrates for cubic GaN-based HFETs;Tschumak;Microelectron. Eng.,2009

5. GaN, GaAs and silicon based micromechanical free standing hot plates for gas sensors;Jakovenko;Procedia Chem.,2009

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