Characterization of anisotropic wet etching of Gallium Nitride for surface orientations of the <0001> crystallographic zone in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si0038.svg"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="bold">H</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:mi mathvariant="bold">P</mml:mi><mml:msub><mml:mrow><mml:mi mathvariant="bold">O</mml:mi></mml:mrow><mml:mrow><mml:mn>4</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math> etchant-Reference-Cited by-同舟云学术

Characterization of anisotropic wet etching of Gallium Nitride for surface orientations of the <0001> crystallographic zone in H3PO4 etchant

Published:2023-03 Issue: Volume:351 Page:114176
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Chen Y.,Xing Y.,Gong J.T.,Li Qi,Guo X.

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference28 articles.

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2. Gallium Nitride–based photodiode: a review;Jabbar;Mater. Today.: Proc.,2021

3. A review of gallium nitride power device and its applications in motor drive;Ding;CES Trans. Electr. Mach. Syst.,2019

4. The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures;Karolina;Mater. Sci. Semicond. Process.,2021

5. Gallium-nitride semiconductor technology and its practical design challenges in power electronics applications: an overview;Dalla Vecchia;Energies,2019

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