An easy method to determine carrier‐capture cross sections: Application to GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333404
Reference4 articles.
1. Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodes
2. Determination of the free energy level of deep centers, with application to GaAs
3. Influence of deep traps on the measurement of free‐carrier distributions in semiconductors by junction capacitance techniques
4. Energy dependence of deep level introduction in electron irradiated GaAs
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