Influence of deep traps on the measurement of free‐carrier distributions in semiconductors by junction capacitance techniques
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663500
Reference20 articles.
1. Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctions
2. Capacitance Measurements on Au–GaAs Schottky Barriers
3. Capacitance Measurements on Au–GaAs Schottky Barriers
4. Capacitance Energy Level Spectroscopy of Deep‐Lying Semiconductor Impurities Using Schottky Barriers
5. Capacitance Energy Level Spectroscopy of Deep‐Lying Semiconductor Impurities Using Schottky Barriers
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