Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctions-Reference-Cited by-同舟云学术

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Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctions

Published:1964-07 Issue:7 Volume:11 Page:345-349
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sah C.T.,Reddi V.G.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31597/01473725.pdf?arnumber=1473725

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