DLTS and PL study of defects in InAlAs/InP heterojunctions grown by metal organic chemical vapor deposition-Reference-Cited by-同舟云学术

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DLTS and PL study of defects in InAlAs/InP heterojunctions grown by metal organic chemical vapor deposition

Published:2005-01 Issue:2 Volume:116 Page:202-207
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Bouzgarrou S.,Ben Salem M.M.,Hassen F.,Kalboussi A.,Souifi A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy

2. Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process

3. Capacitance transient analysis of molecular-beam epitaxial n-In0.53Ga0.47As and n-In0.52Al0.48 As

4. Optical and Electrical Measurements of Low-Temperature InAlAs

5. Photo-induced current transient spectroscopy of Al0.48In0.52As semi-insulating layers grown on InP by molecular beam epitaxy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation;AIP Advances;2024-01-01

2. Magnesium doping in InAlAs and InGaAs/Mg films lattice-matched to InP grown by MOVPE;Journal of Nanoparticle Research;2017-01

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