Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods-Reference-Cited by-同舟云学术

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Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

Published:2009-03-09 Issue:10 Volume:94 Page:102902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

O’Connor É.,Monaghan S.,Long R. D.,O’Mahony A.,Povey I. M.,Cherkaoui K.,Pemble M. E.,Brammertz G.,Heyns M.,Newcomb S. B.,Afanas’ev V. V.,Hurley P. K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3089688

Reference22 articles.

1. Interface Defects in HfO[sub 2], LaSiO[sub x], and Gd[sub 2]O[sub 3] High-k/Metal–Gate Structures on Silicon

2. Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation

3. In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

4. High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric

5. Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters

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