Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2883967
Reference14 articles.
1. Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz
2. Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces
3. Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs
4. Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
5. Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
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