Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation-Reference-Cited by-同舟云学术

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Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation

Published:2007-10-15 Issue:16 Volume:91 Page:163512
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hinkle C. L.,Sonnet A. M.,Vogel E. M.,McDonnell S.,Hughes G. J.,Milojevic M.,Lee B.,Aguirre-Tostado F. S.,Choi K. J.,Kim J.,Wallace R. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2801512

Reference20 articles.

1. Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4)

2. Control of compound semiconductor–insulator interfaces by an ultrathin molecular-beam epitaxy Si layer

3. Accumulation capacitance for GaAs‐SiO2interfaces with Si interlayers

4. High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon

5. Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers

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