In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric-Reference-Cited by-同舟云学术

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In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

Published:2008-01-14 Issue:2 Volume:92 Page:022902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

O’Connor E.,Long R. D.,Cherkaoui K.,Thomas K. K.,Chalvet F.,Povey I. M.,Pemble M. E.,Hurley P. K.,Brennan B.,Hughes G.,Newcomb S. B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2829586

Reference17 articles.

1. Current conduction processes in high-κ Gd0.31Ga0.1O0.59/Ga2O3 gate dielectric stacks on GaAs

2. Advances in high κ gate dielectrics for Si and III–V semiconductors

3. Structure of epitaxialGd2O3films grown on GaAs(100)

4. Proceedings of the Seventh International Conference on Solid-State and IC Technology;Ashley T.,2004

5. Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling

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