Current conduction processes in high-κ Gd0.31Ga0.1O0.59/Ga2O3 gate dielectric stacks on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1687999
Reference11 articles.
1. Interface charge and nonradiative carrier recombination in Ga[sub 2]O[sub 3]–GaAs interface structures
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3. Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor
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5. Passivation of GaAs using gallium-gadolinium oxides
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1. Nitrided HfTiON/Ga2O3(Gd2O3) as stacked gate dielectric for GaAs MOS applications;Applied Physics Express;2014-05-02
2. Modeling and analysis of the admittance characteristics of n+metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3on In0.53Ga0.47As;Journal of Applied Physics;2012-04
3. Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+MOS capacitors: The interface state model and beyond;Journal of Applied Physics;2011-06-15
4. Gallium oxide and gadolinium gallium oxide insulators on Si δ-doped GaAs/AlGaAs heterostructures;Journal of Applied Physics;2008-11-15
5. In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric;Applied Physics Letters;2008-01-14
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