Modeling and analysis of the admittance characteristics of n+metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3on In0.53Ga0.47As-Reference-Cited by-同舟云学术

Modeling and analysis of the admittance characteristics of n+metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3on In0.53Ga0.47As

Published:2012-04 Issue:7 Volume:111 Page:074109
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Paterson G. W.,Holland M. C.,Thayne I. G.,Long A. R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3702468

Reference22 articles.

1. Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition

2. Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces

3. Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

4. High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric

5. Electrical Properties of III-V/Oxide Interfaces

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3. (Invited) Frequency Dispersion and Band Alignments in ZrO2/n-GaAs MOS Capacitor;ECS Transactions;2014-03-24

4. La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode;Solid-State Electronics;2013-04

5. (Invited) Interface Trap Densities and Admittance Characteristics of III-V MOS Capacitors;ECS Transactions;2013-03-15