Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3204465
Reference22 articles.
1. New and unified model for Schottky barrier and III–V insulator interface states formation
2. High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer
3. Inversion mode n-channel GaAs field effect transistor with high-k/metal gate
4. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition
5. Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
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