High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer-Reference-Cited by-同舟云学术

High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

Published:2008-09-29 Issue:13 Volume:93 Page:132902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Hyoung-Sub,Ok Injo,Zhu Feng,Zhang M.,Park S.,Yum J.,Zhao H.,Majhi Prashant,Garcia-Gutierrez Domingo I.,Goel Niti,Tsai W.,Gaspe C. K.,Santos M. B.,Lee Jack C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2990645

Reference16 articles.

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2. Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs

3. IEEE International Symposium on Compound Semiconductors;Hong M.,1997

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