Hybrid molecular beam epitaxy of germanium-based oxides

Author:

Liu Fengdeng,Truttmann Tristan K.ORCID,Lee Dooyong,Matthews Bethany E.ORCID,Laraib Iflah,Janotti Anderson,Spurgeon Steven R.,Chambers Scott A.,Jalan BharatORCID

Abstract

AbstractGermanium-based oxides such as rutile GeO2 are garnering attention owing to their wide band gaps and the prospects of ambipolar doping for application in high-power devices. Here, we present the use of germanium tetraisopropoxide (GTIP), a metal-organic chemical precursor, as a source of germanium for the demonstration of hybrid molecular beam epitaxy for germanium-containing compounds. We use Sn1-xGexO2 and SrSn1-xGexO3 as model systems to demonstrate our synthesis method. A combination of high-resolution X-ray diffraction, scanning transmission electron microscopy, and X-ray photoelectron spectroscopy confirms the successful growth of epitaxial rutile Sn1-xGexO2 on TiO2(001) substrates up to x = 0.54 and coherent perovskite SrSn1-xGexO3 on GdScO3(110) substrates up to x = 0.16. Characterization and first-principles calculations corroborate that germanium occupies the tin site, as opposed to the strontium site. These findings confirm the viability of the GTIP precursor for the growth of germanium-containing oxides by hybrid molecular beam epitaxy, thus providing a promising route to high-quality perovskite germanate films.

Funder

U.S. Department of Energy

United States Department of Defense | U.S. Air Force

Publisher

Springer Science and Business Media LLC

Subject

Mechanics of Materials,General Materials Science

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