Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2-Reference-Cited by-同舟云学术

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Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2

Published:2021-06-28 Issue:26 Volume:118 Page:260501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chae Sieun¹,Mengle Kelsey¹^ORCID,Bushick Kyle¹^ORCID,Lee Jihang¹,Sanders Nocona¹,Deng Zihao¹^ORCID,Mi Zetian²^ORCID,Poudeu Pierre F. P.¹^ORCID,Paik Hanjong³^ORCID,Heron John T.¹^ORCID,Kioupakis Emmanouil¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

2. Department of Electrical and Computer Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

3. Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, New York 14853, USA

Funder

National Science Foundation

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0056674

Reference100 articles.

1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

3. Physics of Semiconductor Devices

4. Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level

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1. Epitaxial growth of rutile GeO2 via MOCVD;Applied Physics Letters;2024-09-02

2. Epitaxial Growth of Ga2O3: A Review;Materials;2024-08-28

3. The fabrication of ultra-wide bandgap GeO2 thin films by DC magnetron sputtering: The impacts of growth temperature and post-annealing process;Vacuum;2024-07

4. Growth of GeO₂ on R-Plane and C-Plane Sapphires by MOCVD;ACS Applied Engineering Materials;2024-06-15

5. Two-dimensional monolayer BiSnO₃: a novel wide-band-gap semiconductor with high stability and strong ultraviolet absorption;Journal of Physics: Condensed Matter;2024-04-26

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