Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level-Reference-Cited by-同舟云学术

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Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level

Published:1981-09 Issue:9 Volume:24 Page:821-825
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Dorkel J.M.,Leturcq Ph.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Proc. I.E.E.E.;Caughey,1977

2. Proc. I.E.E.E.;Caughey,1977

3. Accurate calculations of the forward drop and power dissipation in thyristors

4. Recombination in the end regions of pin diodes

5. Die Temperaturabhängigkeit der Defektelektronenbeweglichkeit in Siliziumkristallen

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