Inversion mode n-channel GaAs field effect transistor with high-k/metal gate-Reference-Cited by-同舟云学术

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Inversion mode n-channel GaAs field effect transistor with high-k/metal gate

Published:2008-04-14 Issue:15 Volume:92 Page:153508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

de Souza J. P.,Kiewra E.,Sun Y.,Callegari A.,Sadana D. K.,Shahidi G.,Webb D. J.,Fompeyrine J.,Germann R.,Rossel C.,Marchiori C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2912027

Reference12 articles.

1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

2. Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs

3. Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy

4. The (Ga2O3)1−x(Gd2O3)x, Oxides with x = 0–1.0 for GaAs Passivation

5. Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers

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