Investigating the electronic properties of Al2O3/Cu(In,Ga)Se2 interface-Reference-Cited by-同舟云学术

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Investigating the electronic properties of Al2O3/Cu(In,Ga)Se2 interface

Published:2015-10 Issue:10 Volume:5 Page:107101
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Kotipalli R.¹,Vermang B.²³⁴,Joel J.²,Rajkumar R.¹,Edoff M.²,Flandre D.¹^ORCID

Affiliation:

1. ICTEAM, Université catholique de Louvain, Louvain-la-Neuve, 1348, Belgium

2. Ångström Solar Center, University of Uppsala, Uppsala, 75121, Sweden

3. ESAT-KU Leuven, University of Leuven, Leuven, 3001, Belgium

4. IMEC, Kapeldreef 75, Leuven, 3001, Belgium

Funder

FP7 Marie Curie

Energimyndigheten (Swedish Energy Agency)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4932512

Reference24 articles.

1. Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%

2. Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells

3. Alkali-Templated Surface Nanopatterning of Chalcogenide Thin Films: A Novel Approach Toward Solar Cells with Enhanced Efficiency

4. Employing Si solar cell technology to increase efficiency of ultra‐thin Cu(In,Ga)Se 2 solar cells

5. Introduction of Si PERC Rear Contacting Design to Boost Efficiency of Cu(In,Ga)Se $_{\bf 2}$ Solar Cells

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1. Multiple Impacts of the Aluminum Oxide Passivation Layer on the Properties OF Cu(In,Ga)Se₂ Solar Cells;Advanced Materials Interfaces;2024-08-05

2. Effect of Electron Transport Layers, Interface Defect Density and Working Temperature on Perovskite Solar Cells Using SCAPS 1-D Software;East European Journal of Physics;2024-03-05

3. Rear Surface Passivation for Ink‐Based, Submicron CuIn(S, Se)₂ Solar Cells;Advanced Energy Materials;2024-01-04

4. Rb Diffusion and Oxide Removal at the RbF-Treated Ga₂O₃/Cu(In,Ga)Se₂ Interface in Thin-Film Solar Cells;ACS Applied Materials & Interfaces;2023-11-01

5. Band offsets and point-defect charges of the aluminum and hafnium oxides in contact with the Cu(In,Ga)Se₂ chalcopyrite;Journal of Physics: Condensed Matter;2023-10-24

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