Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties-Reference-Cited by-同舟云学术

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Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties

Published:2019-11-14 Issue:18 Volume:126 Page:184501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yoon S.-H.¹,Kato K.¹^ORCID,Yokoyama C.¹,Ahn D.-H.¹,Takenaka M.¹,Takagi S.¹

Affiliation:

1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Funder

Japan and the Grant in-Aid for Scientific Research through the MEXT

Materials Education program for the future leaders in Research, Industry, and Technology

Core Research for Evolutional Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5111630

Reference31 articles.

1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

2. Nanometre-scale electronics with III–V compound semiconductors

3. High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions

5. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Responsivity Enhancement of Wafer‐Bonded In_0.53Ga_0.47As Photo‐Field‐Effect Transistor on Si Substrate via Equivalent Oxide Thickness Scaling;physica status solidi (a);2024-02-02

2. Design Points of InGaAs MFMIS Tunnel FET for Large Memory Window and Stable Ferroelectric Memory Operation;IEEE Transactions on Electron Devices;2024

3. Effects of Al₂O₃ Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties;IEEE Transactions on Electron Devices;2023-12

4. Accurate evaluation of interface trap density at InAs MOS interfaces by using C–V curves at low temperatures;Japanese Journal of Applied Physics;2023-02-15

5. Energy-Efficient III–V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing;ACS Applied Materials & Interfaces;2022-05-17

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