Design Points of InGaAs MFMIS Tunnel FET for Large Memory Window and Stable Ferroelectric Memory Operation-Reference-Cited by-同舟云学术

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Design Points of InGaAs MFMIS Tunnel FET for Large Memory Window and Stable Ferroelectric Memory Operation

Published:2024 Issue: Volume: Page:1-7
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ko Kyul¹^ORCID,Ahn Dae-Hwan²^ORCID,Jeong Jai-Youn¹^ORCID,Ju Byeong-Kwon³^ORCID,Han Jae-Hoon¹^ORCID

Affiliation:

1. Center for Opto-Electronics Materials and Devices, Korea Institute of Science and Technology (KIST), Seoul, South Korea

2. Center for Quantum Information, Korea Institute of Science and Technology (KIST), Seoul, South Korea

3. School of Electrical Engineering, Display and Nanosensor Laboratory, Korea University, Seoul, Republic of Korea

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology (KIST) Institution Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/4358746/10661243.pdf?arnumber=10661243

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