Structure of epitaxialGd2O3films grown on GaAs(100)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.10913/fulltext
Reference9 articles.
1. Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy
2. The (Ga2O3)1−x(Gd2O3)x, Oxides with x = 0–1.0 for GaAs Passivation
3. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation
4. Surface passivation of GaAs with ultrathin Si3N4/Si interface control layer formed by MBE and in situ ECR plasma nitridation
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