Experimental evidence for mobile luminescence center mobility on partial dislocations in 4H-SiC using hyperspectral electroluminescence imaging-Reference-Cited by-同舟云学术

Experimental evidence for mobile luminescence center mobility on partial dislocations in 4H-SiC using hyperspectral electroluminescence imaging

Published:2013-06-17 Issue:24 Volume:102 Page:242109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Caldwell Joshua D.,Giles Alexander,Lepage Dominic,Carrier Dominic,Moumanis Khalid,Hull Brett A.,Stahlbush Robert E.,Myers-Ward Rachael L.,Dubowski Jan J.,Verhaegen Marc

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4810909

Reference40 articles.

1. C. F. Bohren and D. R. Huffman, Absorption and Scattering of Light by Small Particles (John Wiley & Sons, Inc., Weinheim, Germany, 2004), pp. 331.

2. Phonon-enhanced light–matter interaction at the nanometre scale

3. Degradation of hexagonal silicon-carbide-based bipolar devices

4. Mitigating Defects within Silicon Carbide Epitaxy

5. Electrical characterization of 4H–SiC avalanche photodiodes containing threading edge and screw dislocations

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stacking faults in 4H–SiC epilayers and IGBTs;Materials Science in Semiconductor Processing;2024-07

2. Impurities and defects in 4H silicon carbide;Applied Physics Letters;2023-05-01

3. Effect of Microindentation on Electroluminescence of SiC P-I-N Junctions;Materials;2022-01-11

4. Porous SiC electroluminescence from p–i–n junction and a lateral carrier diffusion model;Journal of Applied Physics;2021-01-28

5. Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects;Advanced Functional Materials;2020-01-20