Electrical characterization of 4H–SiC avalanche photodiodes containing threading edge and screw dislocations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3432663
Reference17 articles.
1. Advances in Silicon Carbide Electronics
2. Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H–SiC Schottky diodes
3. Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers
4. Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability
5. Effect of crystallographic defects on the reverse performance of 4H–SiC JBS diodes
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