Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H–SiC Schottky diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1829784
Reference38 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
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1. Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices;Materials Research Express;2022-12-01
2. Electron trapping effects in SiC Schottky diodes: Review and comment;Microelectronics Reliability;2021-12
3. Role of deep levels and barrier height lowering in current-flow mechanism in 150 μm thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors;Applied Physics Letters;2021-08-09
4. Characterization of morphological defects related to micropipes in 4H-SiC thick homoepitaxial layers;Journal of Crystal Growth;2021-08
5. Mapping of large structural defects in SiC Schottky contacts using internal photoemission microscopy;Materials Science in Semiconductor Processing;2020-11
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