Mapping of large structural defects in SiC Schottky contacts using internal photoemission microscopy

Author:

Shiojima Kenji,Kato Masashi

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. SiC devices: physics and numerical simulation;Ruff;IEEE Trans. Electron. Dev.,1994

2. Performance limiting surface defects in SiC epitaxial p-n junction diodes;Kimoto;IEEE Trans. Electron. Dev.,1999

3. Effects of surface and crystalline defects on reverse characteristics of 4H-SiC junction barrier Schottky diodes;Katsuno;Jpn. J. Appl. Phys.,2011

4. Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H–SiC Schottky diodes;Wang;J. Appl. Phys.,2005

5. Defect-driven inhomogeneities in Ni/4H-SiC Schottky barriers;Tumakha;Appl. Phys. Lett.,2005

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