Author:
Liang Gang-qiang,Qian Hao,Su Yi-lin,Shi Lin,Li Qiang,Liu Yuan
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Metals and Alloys
Reference142 articles.
1. Powell A R. Industrial perspectives of SiC bulk growth. Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications, 2021, 1: 33–46.
2. Capper P, Mauk M. Liquid phase epitaxy of electronic, optical and optoelectronic materials. John Wiley & Sons, 2007.
3. Yole Développement. Power SiC: More than $ 4 billion invested in the industry. 2020: 1–7. https://www.yolegroup.com/press-release/power-sic-more-than-4-billion-invested-in-the-industry.
4. Kimoto T, Cooper J A. Fundamentals of silicon carbide technology: Growth, characterization, devices and applications. John Wiley & Sons, 2014.
5. Mercier F, Chaussende D, Dedulle J M, et al. Top seeded solution growth of 3C-SiC single crystals. Mater. Sci. Forum, 2009, 615(617): 41–44.
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