Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects-Reference-Cited by-同舟云学术

Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects

Published:2020-01-20 Issue:10 Volume:30 Page:1907357
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Hauer Benedikt¹,Marvinney Claire E.²³^ORCID,Lewin Martin¹^ORCID,Mahadik Nadeemullah A.⁴,Hite Jennifer K.⁴^ORCID,Bassim Nabil⁵,Giles Alexander J.⁴,Stahlbush Robert E.⁴,Caldwell Joshua D.²^ORCID,Taubner Thomas¹^ORCID

Affiliation:

1. Institute of Physics (IA) RWTH Aachen University 52056 Aachen Germany

2. Department of Mechanical Engineering Vanderbilt University 2400 Highland Ave Nashville TN 37212 USA

3. Quantum Information Science Group Oak Ridge National Laboratory 1 Bethel Valley Rd Oak Ridge TN 37830 USA

4. US Naval Research Laboratory 4555 Overlook Ave, S.W. Washington, DC 20375 USA

5. Department of Materials Science and Engineering McMaster University Hamilton ON L8S 4L8 Canada

Funder

Ministerium für Innovation, Wissenschaft und Forschung des Landes Nordrhein-Westfalen

Deutsche Forschungsgemeinschaft

U.S. Naval Research Laboratory

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201907357

Reference105 articles.

1. Current Status and Emerging Trends in Wide Bandgap (WBG) Semiconductor Power Switching Devices

2. Power Semiconductor Devices: For Variable Speed Drives

3. Material science and device physics in SiC technology for high-voltage power devices

4. Review of Silicon Carbide Power Devices and Their Applications

5. Power GaN Devices

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