Porous SiC electroluminescence from p–i–n junction and a lateral carrier diffusion model
Author:
Affiliation:
1. Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7, Canada
2. Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7, Canada
Funder
Natural Sciences and Engineering Research Council of Canada
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0033243
Reference27 articles.
1. Silicon carbide light-emitting diode as a prospective room temperature source for single photons
2. Photoluminescence and transport studies of boron in 4H SiC
3. Emission of blue light from hydrogenated amorphous silicon carbide
4. Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. ZnO nanowire network/4H-SiC heterojunction for improved performance ultraviolet photodetector: The effect of different SiC doping concentrations on photoresponse properties;Materials Today Communications;2023-06
2. Effects of surface roughness and single Shockley stacking fault expansion on the electroluminescence of 4H-SiC;Optics Continuum;2023-04-24
3. Effect of Microindentation on Electroluminescence of SiC P-I-N Junctions;Materials;2022-01-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3