Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals-Reference-Cited by-同舟云学术

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Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals

Published:2011-05-23 Issue:21 Volume:98 Page:212902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mikhelashvili V.,Meyler B.,Yofis S.,Shneider Y.,Zeidler A.,Garbrecht M.,Cohen-Hyams T.,Kaplan W. D.,Lisiansky M.,Roizin Y.,Salzman J.,Eisenstein G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3595484

Reference17 articles.

1. Flash Memories

2. On the go with SONOS

3. Improved Device Characteristics in Charge-Trapping-Engineered Flash Memory Using High-k Dielectrics

4. Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers

5. A silicon nanocrystals based memory

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1. Demonstration of the normally off β -Ga2O3 MOSFET with high threshold voltage and high current density;Applied Physics Letters;2023-11-06

2. Improvement of the storage ability of Si-rich oxide layer in poly-Si based nonvolatile memory devices by implementation of taguchi method;Semiconductor Science and Technology;2019-08-28

3. Role of annealing temperature on charge storage characteristics of Au nanocrystals with HfO2 tunneling and blocking layers;Superlattices and Microstructures;2018-08

4. Investigation of electrical and compositional properties of SiO2/Au/SiO2 for nonvolatile memory application;Applied Physics A;2018-07-19

5. Non-volatile memory and negative photoconductivity in a metal-insulator-semiconductor diode with embedded Co nanoparticles;Journal of Applied Physics;2018-06-14

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