Demonstration of the normally off <b> <i>β</i> </b>-Ga2O3 MOSFET with high threshold voltage and high current density-Reference-Cited by-同舟云学术

Demonstration of the normally off β -Ga2O3 MOSFET with high threshold voltage and high current density

Published:2023-11-06 Issue:19 Volume:123 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Cai Yuncong¹^ORCID,Feng Zhaoqing¹^ORCID,Wang Zhengxing¹,Song Xiufeng¹^ORCID,Hu Zhuangzhuang²^ORCID,Tian Xusheng¹^ORCID,Zhang Chunfu¹^ORCID,Liu Zhihong¹^ORCID,Feng Qian¹^ORCID,Zhou Hong¹^ORCID,Zhang Jincheng¹,Hao Yue¹^ORCID

Affiliation:

1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University 1 , Xi'an 710071, China

2. National Key Laboratory of Solid-State Microwave Devices and Circuits 2 , Nanjing 210016, China

Abstract

In this work, we demonstrated the enhancement mode (E-mode) β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) by introducing a hybrid floating gate (HFG) structure. This E-mode Ga2O3 MOSFET featured the highest VTH of 9.03 V and the highest maximum current ID of 70.0 mA/mm among the reported lateral normally off β-Ga2O3 MOSFETs. Meanwhile, a breakdown voltage of 834 V, a specific on-resistance RON,sp of 19.3 mΩ·cm2, and a sub-threshold swing SS of 87 mV/dec were achieved simultaneously. In addition, VTH shifted by only 9.9% after applying a gate stress of 25 V for 105 s. These findings provide a promising path for the development of enhancement-mode Ga2O3 power devices by incorporating a charge-storage structure.

Funder

National Natural Science Foundation of China

Science and Technology on Reliability Physics and Applications Technology of Electronic Component Laboratory

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0165780/18201497/193501_1_5.0165780.pdf

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