Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2751579
Reference15 articles.
1. Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer
2. Over-Erase Phenomenon in SONOS-Type Flash Memory and its Minimization Using a Hafnium Oxide Charge Storage Layer
3. Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications
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