Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference15 articles.
1. On the go with SONOS
2. Design considerations in scaled SONOS nonvolatile memory devices
3. Design and scaling of a SONOS multidielectric device for nonvolatile memory applications
4. High performance SONOS memory cells free of drain turn-on and over-erase: compatibility issue with current flash technology
5. Charge transport and storage of low programming voltage SONOS/MONOS memory devices
Cited by 47 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Synergic Impacts of CF4 Plasma Treatment and Post-thermal Annealing on the Nonvolatile Memory Performance of Charge-Trap-Assisted Memory Thin-Film Transistors Using Al–HfO2 Charge Trap and In–Ga–Zn–O Active Channel Layers;ACS Applied Electronic Materials;2022-03-07
2. Analysis of HfO2 Charge Trapping Layer Characteristics After UV Treatment;ECS Journal of Solid State Science and Technology;2021-04-01
3. Optimization of MIS type Non-Volatile Memory Device with Al-Doped HfO2 as Charge Trapping Layer;ECS Journal of Solid State Science and Technology;2020-08-24
4. Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties;physica status solidi (RRL) – Rapid Research Letters;2019-02-07
5. A metal/Ba0.6Sr0.4TiO3/SiO2/Si single film device for charge trapping memory towards a large memory window;Applied Physics Letters;2017-05-29
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3