Synergic Impacts of CF<sub>4</sub> Plasma Treatment and Post-thermal Annealing on the Nonvolatile Memory Performance of Charge-Trap-Assisted Memory Thin-Film Transistors Using Al–HfO<sub>2</sub> Charge Trap and In–Ga–Zn–O Active Channel Layers-Reference-Cited by-同舟云学术

Synergic Impacts of CF₄ Plasma Treatment and Post-thermal Annealing on the Nonvolatile Memory Performance of Charge-Trap-Assisted Memory Thin-Film Transistors Using Al–HfO₂ Charge Trap and In–Ga–Zn–O Active Channel Layers

Published:2022-03-07 Issue:3 Volume:4 Page:1277-1287
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kim Jin-Ju¹,Yoon Sung-Min¹^ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Korea

Funder

Samsung

Ministry of Education

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00009

Reference52 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. The Effect of Deposition Conditions and Annealing on the Performance of High-Mobility GIZO TFTs

3. Toward High-Performance Amorphous GIZO TFTs

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

5. Electron transport in single and multicomponent n-type oxide semiconductors

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