A comparative study of thin-film transistors based on mist-CVD deposited InAlZnO with different Al contents
Author:
Funder
Ministry of Science and Technology, Taiwan
National Science and Technology Council
Publisher
Elsevier BV
Reference27 articles.
1. Gate driver circuit based on depletion-mode indium-gallium-zinc oxide thin-film transistors using capacitive coupling effect;Lee;IEEE Trans. Electron. Dev.,2022
2. Synergic impacts of CF4 plasma treatment and post-thermal annealing on the nonvolatile memory performance of charge-trap-assisted memory thin-film transistors using Al-HfO2 charge trap and In-Ga-Zn-O active channel layers;Kim;ACS Appl. Electron. Mater.,2022
3. Demonstration of extended-gate structure for ion sensors based on amorphous indium-gallium-zinc oxide thin-film transistors;Iwamatsu;ECS J. Solid State Sci. Technol.,2022
4. Investigations of photoresponse characteristics of ultrasonic spray pyrolysis deposited zinc oxide-based phototransistors at different quiescent points;Liu;Mater. Sci. Semicond. Process.,2021
5. Dual-gated low operating voltage metal oxide thin-film transistor for highly sensitive and fast-response pressure sensing application;Pandey;IEEE Sensor. J.,2023
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